蓝箭电子 BRCS2312MA N沟道MOS场效应管

　　Descriptions

　　N-CHANNEL MOSFET in a SOT-23 Plastic Package.

　　Electrical Characteristics(Ta=25℃)

　　Gate Threshold Voltage: 0.5V 0.9V 1.2V

　　Drain–Source Breakdown Voltage: 20~21V

　　Zero Gate Voltage Drain Current: 1.0μA

　　Gate–Body Leakage: ±100nA

　　Static Drain–Source On–Resistance

　　RDS(on)1 VGS=4.5V ID=5.0A: 16.5~33mΩ

　　RDS(on)2 VGS=2.5V ID=4.5A: 23.5~40mΩ

　　Drain–Source Diode Forward Voltage: 0.78~1.2V

　　Input Capacitance: 860pF

　　Output Capacitance: 800pF

　　Reverse Transfer Capacitance: 495pF

　　Gate resistance: 4.9Ω

　　Total Gate Charge Qg(4.5V): 7nC

　　Gate Source Charge: 1nC

　　Gate Drain Charge: 2nC

　　Turn–On Delay Time: 7ns

　　Turn–On Rise Time: 10ns

　　Turn–Off Delay Time: 32ns

　　Turn–Off Fall Time: 11ns