BRCS2300MC 蓝箭N道MOS管 采用SOT23-3封装

　　Descriptions

　　N- CHANNEL MOSFET in a SOT23-3 Plastic Package.

　　Absolute Maximum Ratings(Ta=25℃)

　　< Drain-Source Voltage: 20V

　　< Gate-Source Voltage: ±20A

　　< Drain Current – Continuous: 4.5A

　　< Pulsed Drain Current: 12A

　　< Single Pulsed Avalanche Energy: 210mJ

　　< Power Dissipation: 1.4W

　　< Maximum Junction-to-Ambient t≤10s: 90℃/W

　　< Maximum Junction-to-Ambient Steady-State: 125℃/W

　　< Maximum Junction-to-Lead Steady-State: 80℃/W