蓝箭 BRCS20N15DP N沟道TO-252封装MOS管

　　Descriptions

　　N-CHANNELMOSFETinaTO-252PlasticPackage.

　　Features

　　LowRDS(on),lowgatecharge,lowCrss,fastswitching.HFProduct.

　　Applications

　　Suited for low voltage applications such as automotive, DC/DC Converters, high efficiency switching for power management in portable and battery operated products,and power management interface card for TV or Monitor.

　　Electrical Characteristics(Ta=25℃)

　　Electrical Characteristics(Ta=25℃)

　　Drain-Source Breakdown Voltage: 20~21.5V

　　Zero Gate Voltage Drain Current: 1.0μA

　　Gate-Body leakage current: ±100nA

　　Static Drain-Source On-Resistance

　　RDS(on)1: 19~25mΩ

　　RDS(on)2: 24~38mΩ

　　Drain–Source Diode Forward Voltage: 1.2V

　　Gate Threshold Voltage: 0.5V 0.77V 1.0V

　　Input Capacitance: 860pF

　　Output Capacitance: 800pF

　　Reverse Transfer Capacitance: 495pF

　　Gate Resistance: 4.9Ω

　　Total Gate Charge(10V): 12.5nC

　　Total Gate Charge(4.5V): 6nC

　　Gate Source Charge: 1nC

　　Gate Drain Charge: 2nC

　　Turn-On Delay Time: 3ns

　　Turn-On Rise Time: 7.5ns

　　Turn-Off Delay Time: 20ns

　　Turn-Off Fall Time: 6ns