GMT致新 G5416QS1U QFN4X4-30 22+完整的DDR内存电源解决方案

　　General Description

　　The G5416 is intended for DDR2/DDR3/DDR3L/

　　LPDDR3/DDR4 memory systems. It integrates a synchronous

　　buck PWM converter with a 1.5A sink-source

　　linear regulator and buffered reference.

　　The PWM converter uses constant on-time control

　　scheme to handle wide input/output voltage ratios with

　　ease and provides 100ns “instant-on” response to

　　load transients while maintaining a relatively constant

　　switching frequency. The G5416 achieves high efficiency

　　at a reduced cost by eliminating the current-

　　sense resistor found in traditional current-mode

　　PWMs. Single-stage buck conversion allows these

　　devices to directly step down high-voltage batteries for

　　the highest possible efficiency.

　　The 1.5A sink/source tracking termination regulator is

　　specifically designed for low-cost/ low-external component

　　count systems. The regulator contains a high

　　speed operational amplifier that provides fast load

　　transient response with only 20μF (2x10μF) of ceramic

　　output capacitance. The G5416 supports remote

　　sensing functions and all features required to power

　　the DDR2/DDR3/DDR3L/LPDDR3/DDR4 VTT bus

　　termination according to the JEDEC specification. In

　　addition, the G5416 includes integrated sleep-state

　　controls placing VTT in High-Z in S3 (suspend to RAM)

　　and soft-off for VTT and VTTREF in S5 (Shutdown).

　　The 2.5V/ 1.0A LDO supports the 2.5V requirement of

　　DDR4 application. It converts 3.3V input power to 2.5V

　　supply for V2P5.

　　The G5416 provides OVP, UVP, over current and

　　thermal shutdown protection functions and is available

　　in a 30-pin 4X4 QFN package.

　　Features

　　Synchronous Buck Converter (VDDQ)

　　Ultra-High Efficiency

　　Integrated 8.5mΩ at VCC=5V N-Channel

　　MOSFET for Low Side

　　Integrated 20mΩ at VCC=5V N-Channel

　　MOSFET for High Side

　　No Current-Sense Resistor (Lossless ILIMIT)

　　Quasi-PWM with 100ns Load-Step Response

　　Adjustable Output Range from 0.75V to 3.6V

　　for 1.8V(DDR2) /1.5V(DDR3) /1.35V(DDR3L)

　　/1.2V(LPDDR3) /1.2V(DDR4)

　　2V to 26V Battery Input Range

　　Programmable Switching Frequency

　　OVP & UVP of VDDQ Output

　　Power-Good Indicator

　　1.5A LDO (VTT), Buffered Reference (VTTREF)

　　Support DDR2 (0.9 VTT) and DDR3 (0.75 VTT)

　　and DDR4 (0.6 VTT) Requirements

　　VLDOIN Voltage Range: 1.2V to 3.6V

　　Requires Only 20μF Ceramic VTT Output Capacitance

　　Supports High-Z in S3 and Soft-Off in S5

　　Integrated Divider Tracks 1/2 VDDQSNS for

　　Both VTT and VTTREF

　　Remote Sensing (VTTSNS)

　　±20mV Accuracy for VTT and VTTREF

　　10mA Buffered Reference (VTTREF)

　　Built-In Soft-Start to Reduce the VLDOIN

　　Surging Current

　　Over Current Protection of VTT Output

　　Thermal Shutdown Protection

　　2.5V/1A LDO (V2P5)

　　Support DDR4 VPP Requirement

　　Applications

　　Notebook Computers

　　DRAM Supply as Low as 0.75V