GMT G5016KD1U TDFN2X3-14 22+双超低通电阻负载开关，带控制通断

　　General Description

　　The G5016 is dual N-channel MOSFET power switch

　　designed for high-side load-switching applications, and

　　the device has a typical RDS(ON) of 16mΩ and the output

　　current is limited to 6A. Each switch is independently

　　controlled by an on/off input (EN1, EN2),

　　which is capable of interfacing directly with low-voltage

　　GPIO control signals.

　　In the G5016, a 250Ω on-chip load resistor is added

　　for quick output discharge (QOD) when the switch is

　　turned off. The rise time of the device is internally controlled

　　in order to avoid in-rush current and can be

　　adjusted using a ceramic capacitor on the CTx pins.

　　The G5016 is available in 14 pin TDFN package.

　　Features

　　Integrated Dual Channel Load Switch

　　Input Voltage Range: 0.8V to 5.5V

　　Dual Ultra-low ON-Resistance (16mΩ)

　　- RDS(on) = 17mΩ at VIN = 5V (VBIAS = 5V)

　　- RDS(on) = 16mΩ at VIN = 3.6V (VBIAS = 5V)

　　- RDS(on) = 16mΩ at VIN = 1.8V (VBIAS = 5V)

　　- RDS(on) = 15mΩ at VIN = 0.8V (VBIAS = 5V)

　　6A Continuous Switch Current per channel

　　Low Quiescent Current

　　- 65μA (Both Channel)

　　- 55μA (Single Channel)

　　Low Threshold Control Inputs

　　Adjustable Slew-rate Control

　　Quick Output Discharge Transistor

　　14 Pin TDFN Package with Thermal Pad

　　Applications

　　Notebooks / Netbooks

　　Tablet PCs

　　Consumer Electronics

　　Set-Top-Boxes

　　Industrial Systems

　　Telecom Systems