dc550色谱柱测多晶硅用氢气中磷杂质含量

名称:dc550色谱柱测多晶硅用氢气中磷杂质含量

供应商:浩瀚色谱(山东)应用技术开发有限公司

价格:面议

最小起订量:1/根

地址:山东滕州市(商务部和技术部)

手机:13963221227

联系人:王经理 (请说在中科商务网上看到)

产品编号:218334546

更新时间:2025-01-10

发布者IP:27.215.153.214

详细说明
产品参数
公司区域:全国
包装:纸箱
售后服务:yes
用途:磷化物
颜色:白
规格:3m*1/8
供货方式:现货
公司行业:色谱
材质:不锈钢
产地:山东
型号:DC550
品牌:浩瀚
是否进口:NO

  电子级多晶硅是制造半导体芯片和大规模集成电路最基础的材料,对我国电子、信息和国家安全领域具有重大意义。电子级多晶硅对产品纯度、杂质控制的要求非常苛刻,其主要影响因素是两种原料即三氯氢硅和循环氢气的纯度。

  浩瀚色谱(山东)应用技术开发有限公司,采用DC550填充柱气相色谱法测定多晶硅生产用氢气中磷化氢,三氯化磷,三氯氧磷含量,利用涂层的采样钢瓶进行采集多晶硅生产用氢气,FPD火焰光度检测器检测样品气体中磷化物的含量,取样时间短,降低杂质的引入,得到的样品气体代表性好,提高工作效率。

  名称:17.5%DC-550不锈钢填充柱

  规格:3m*1/8

  *高使用温度:240°C

  适用于:岛津GC-14C,GC-2010,GC-2014,GC-2030

  标准:多晶硅用氢气中磷杂质的测定气相色谱法

  Electronic grade polycrystalline silicon is the most fundamental material for manufacturing semiconductor chips and large-scale integrated circuits, and has significant implications for China's electronics, information, and national security fields. The requirements for product purity and impurity control of electronic grade polycrystalline silicon are very strict, and the main influencing factors are the purity of two raw materials, namely trichlorosilane and recycled hydrogen gas.

  Haohan Chromatography (Shandong) Application Technology Development Co., Ltd. uses DC550 packed column gas chromatography to determine the content of phosphine, phosphorus trichloride, and phosphorus trichloride in hydrogen gas used in polycrystalline silicon production. A coated sampling cylinder is used to collect hydrogen gas used in polycrystalline silicon production, and an FPD flame photometric detector is used to detect the content of phosphides in the sample gas. The sampling time is short, the introduction of impurities is reduced, and the obtained sample gas has good representativeness and improves work efficiency.

  Name: 17.5% DC-550 Stainless Steel Filled Column

  Specification: 3m * 1/8

  *High operating temperature: 240 ° C

  Applicable to: Shimadzu GC-14C, GC-2010,GC-2014,GC-2030

  Standard: Determination of phosphorus impurities in hydrogen gas for polycrystalline silicon by gas chromatography