1  AM2358N  Analog Power  PRELIMINARY  Publication Order Number:  DS-AM2358_D  These miniature surface mount MOSFETs  utilize a   high cell density trench process to provide low   r  DS(on)  and to ensure minimal power loss and heat   dissipation. Typical applications are DC-DC   converters and power management in portable and   battery-powered products such as computers,   printers, PCMCIA cards, cellular and cordless   telephones.  V  DS   (V)  r  DS(on)   (  Ω  )  I  D   (A)  0.092 @ V  GS   = 10 V  3.1  0.107 @ V  GS   = 4.5V  2.9  PRODUCT SUMMARY  60  N-Channel 60V (D-S) MOSFET  •  Low     r  DS(on)  provides higher efficiency and   extends battery life  •  Low thermal impedance copper leadframe  SOT-23 saves board space  •  Fast switching speed  •  High performance trench technology  Notes  a.  Surface Mounted on 1” x 1” FR4 Board.  b.  Pulse width limited by maximum junction temperature  Symbol  Maximum  Units  V  DS  60  V  GS  ±20  T  A  =25  o  C  2.8  T  A  =70  o  C  1.8  I  DM  ±15  I  S  1.7  A  T  A  =25  o  C  1.3  T  A  =70  o  C  0.8  T  J  , T  stg  -55 to 150  o  C  Power Dissipation  a  P  D  Operating Junction and Storage Temperature Range  W  Continuous Source Current (Diode Conduction)  a  ABSOLUTE MAXIMUM RATINGS (T  A   = 25   o  C UNLESS OTHERWISE NOTED)  Parameter  Pulsed Drain Current  b  V  Gate-Source Voltage  Drain-Source Voltage  Continuous Drain Current  a  I  D  A  Symbol  Maximum  Units  t <= 5 sec  100  Steady-State  166  THERMAL RESISTANCE RATINGS  Parameter  o  C/W