详细说明
哈尔滨特博科技有限公司专业生产定制砷化镓单晶衬底片GaAs wafer、多晶晶棒。
尺寸2寸 3寸 4寸 6寸
晶向（100）（111）
类型:N- type 掺Si, P- type 掺Zn, 半绝缘Undope
产品规格请参考下表
| Parameter | Guaranteed / Actual Values | UOM |
| Growth Method: | VGF | |
| Conduct Type: | S-I-N | |
| Dopant: | Undoped | |
| Diameter: | 50.7± 0.1 | mm |
| Orientation: | (100)± 0.50 | |
| OF location/length: | EJ [ 0-1-1]± 0.50/16±1 | |
| IF location/length: | EJ [ 0-1 1 ]± 0.50/7±1 | |
| Resistivity: | Min: 1.0 E8 | Max: 2.2 E8 | Ω·cm |
| Mobility: | Min: 4500 | Max: 5482 | cm2/v.s |
| EPD: | Min: 700 | Max: 800 | / cm2 |
| Thickness: | 350± 20 | µm |
| Edge Rounding: | 0.25 | mmR |
| Laser Marking: | N/A | |
| TTV/TIR: | Max: 10 | µm |
| BOW: | Max: 10 | µm |
| Warp: | Max: 10 | µm |
| Partical Count: | ＜50/wafer(for particle>0.3um) | |
| Surface Finish– front: | Polished | |
| Surface Finish –back: | Etched | |
| Epi-Ready: | Yes | |