A,Nov,2010

　　JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

　　TO-220-3L Plastic-Encapsulate Diodes

　　MBR2030CT, 35CT, 40CT, 45CT, 50CT, 60CT

　　SCHOTTKY BARRIER RECTIFIER

　　FEATURES

　　z Schottky Barrier Chip

　　z Guard Ring Die Construction for Transient Protection

　　z Low Power Loss,High Efficiency

　　z High Surge Capability

　　z High Current Capability and Low Forward Voltage Drop

　　z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,

　　and Polarity Protection Applications

　　MAXIMUM RATINGS ( Ta

　　=25℃ unless otherwise noted )

　　Value

　　Symbol Parameter MBR

　　2030CT

　　MBR

　　2035CT

　　MBR

　　2040CT

　　MBR

　　2045CT

　　MBR

　　2050CT

　　MBR

　　2060CT

　　Unit

　　V

　　RRM Peak repetitive reverse voltage

　　V

　　RWM Working peak reverse voltage

　　V

　　R DC blocking voltage

　　30 35 40 45 50 60 V

　　V

　　R(RMS) RMS reverse voltage 21 24.5 28 31.5 35 42 V

　　I

　　O Average rectified output current @Tc

　　=125℃ 20 A

　　I

　　FSM

　　Non-Repetitive peak forward surge current

　　8.3ms half sine wave

　　150 A

　　P

　　D Power dissipation 2 W

　　R

　　ΘJA Thermal resistance from junction to ambient 50 ℃/W

　　Tj

　　Junction temperature 125 ℃

　　Tstg Storage temperature -55~+150 ℃

　　TO-220-3L

　　1. ANODE

　　2. CATHODE

　　3. ANODEA,Nov,2010

　　ELECTRICAL CHARACTERISTICS (Ta

　　=25℃ unless otherwise specified)

　　Parameter Symbol Device Test conditions Min Typ Max Unit

　　MBR2030CT 30

　　MBR2035CT 35

　　MBR2040CT 40

　　MBR2045CT 45

　　MBR2050CT 50

　　Reverse voltage V(BR)

　　MBR2060CT

　　I

　　R=0.1mA

　　60

　　V

　　MBR2030CT VR=30V

　　MBR2035CT VR=35V

　　MBR2040CT VR=40V

　　MBR2045CT VR=45V

　　MBR2050CT VR=50V

　　Reverse current I

　　R

　　MBR2060CT VR=60V

　　0.1 mA

　　MBR2030CT-2045CT 0.7

　　Forward voltage VF

　　MBR2050CT,2060CT

　　I

　　F=10A

　　0.8

　　V

　　Typical total capacitance Ctot MBR2030CT-2060CT VR=4V,f=1MHz 650 pF