JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Diodes
MBR20100CT SCHOTTKY BARRIER RECTIFIER
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( Ta
=25℃ unless otherwise noted )
Symbol Parameter Value Unit
V
RRM Peak repetitive reverse voltage
V
RWM Working peak reverse voltage
V
R DC blocking voltage
100 V
V
R(RMS) RMS reverse voltage 70 V
I
O Average rectified output current@ Tc
=125℃ 20 A
I
FSM
Non-Repetitive peak forward surge current
8.3ms half sine wave
120 A
P
D Power dissipation 2 W
R
ΘJA Thermal resistance from junction to ambient 50 ℃/W
Tj
Junction temperature 125 ℃
Tstg Storage temperature -55~+150 ℃
ELECTRICAL CHARACTERISTICS (Ta
=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Reverse voltage V(BR) IR=1mA 100 V V V
Reverse current I
R VR=100V 9 0.1 mA
Forward voltage VF1 IF1
=10A 1 V
TO-220-3L
1. ANODE
2. CATHODE
3. ANODE
V
*Pulse test
Forward voltage VF2* IF2
=20A 1.2 V
C,Apr,20140 100 200 300 400 500 600 700 800 900 1000
1
10
100
1000
10000
20 40 60 80 100
0.1
1
10
100
1000
0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
0 5 10 15 20 25 30 35
0
100
200
300
400
20000
1
Forward Characteristics
FORWARD VOLTAGE VF
(mV)
FORWARD CURRENT I
F
(mA)
Ta
=25℃
Ta
=100℃
Reverse Characteristics
Ta
=25℃
Ta
=100℃
REVERSE CURRENT I
R
(uA)
REVERSE VOLTAGE VR
(V)
Typical Characteristics MBR20100CT
Power Derating Curve
POWER DISSIPATION P
D
(W)
AMBIENT TEMPERATURE Ta
( ) ℃
Ta
=25℃
f=1MHz
Capacitance Characteristics
REVERSE VOLTAGE VR
(V)
CAPACITANCE BETWEEN TERMINALS
CT
(pF)
C,Apr,2014